EDN

Cree Announces Sample Release of Two New GaN HEMT Microwave Transistors for Telecommunications Applications

DURHAM, N.C., JANUARY 28, 2009 — Cree, Inc (Nasdaq: CREE) announces the sample release of two 120W, highly efficient GaN HEMT microwave transistors for telecommunication applications such as W-CDMA, ...
EDN

Advances in high power GaN HEMT transistors

Gallium nitride (GaN) HEMT based power transistors are fast becoming adopted for many high power amplifier applications from CW to pulsed or modulated requirements. The key advantage of GaN HEMT ...
Electronic Design

LDMOS Transistors Boost Power In Microwave Applications

M/A-COM, a unit of Tyco Electronics has two new LDMOS (Laterally Diffused Metal Oxide Semiconductor) transistors designed for INMARSAT applications. INMARSAT is the satellite service that serves a ...
Electronic Design

GaN-Based HEMTs Fabricated On 4-in. Silicon Wafers

To harness the high-frequency benefits of gallium nitride (GaN), Nitronex Corp. of Raleigh, N.C., has developed proprietary processing technology for fabricating GaN ...
Scientific American

Microwave Technology Moves Beyond Magnetrons

This article was produced for RFHIC by Scientific American Custom Media, a division separate from the magazine's board of editors. RFHIC's co-founder and CEO, David Cho (left), and RFHIC's co-founder ...
EurekAlert!

Modified microwave oven cooks up next-gen semiconductors

ITHACA, N.Y. -- A household microwave oven modified by a Cornell Engineering professor is helping to cook up the next generation of cellphones, computers and other electronics after the invention was ...